Integrated giant magnetoresistance bridge sensors with transverse permanent magnet biasing

Two types of giant magnetoresistance (GMR) multilayer bridge sensors with integrated permanent magnet biasing are demonstrated. These sensors differ from previous designs where external permanent magnets were used. The bridges consist of four active GMR multilayer elements at the first antiferromagnetic coupling peak of a NiFe/[NiFe/CoFe/Cu](10) structure (GMR=18%). Bridge linearization is obtained by creating opposite biasing fields of equal amplitude (+/- 200 Oe) in contiguous GMR elements of the bridge structure. This is achieved either by using pairs of permanent magnets with the same Mrt value (14 memu/cm2) but different coercivities (type I bridge, H-c1=1400 Oe, H-c2=800 Oe), or by using a single type of permanent magnet and placing the GMR sensor either under the magnet, or on its side (type II bridge). Linear ranges of +/- 200 Oe with field sensitivities of 0.3 mV/(VxOe) were obtained in these bridges. (C) 2000 American Institute of Physics. [S0021-8979(00)33008-0].