Gain measurements on GaAs-based quantum cascade lasers using a two-section cavity technique

被引:26
作者
Barbieri, S
Sirtori, C
Page, H
Beck, M
Faist, J
Nagle, J
机构
[1] Thomson CSF, Cent Rech Lab, F-91404 Orsay, France
[2] Scuola Normale Super Pisa, I-56126 Pisa, Italy
[3] INFM, I-56126 Pisa, Italy
[4] Univ Neuchatel, Inst Phys, CH-2000 Neuchatel, Switzerland
关键词
intersubband transitions; mid-infrared; resonant tunneling; unipolar semiconductor laser;
D O I
10.1109/3.845731
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A two-section cavity device has been used to measure gain spectra and waveguide losses of a GaAs-based quantum cascade laser. The device operates at 8.9 mu m and optical confinement is obtained by means of Al-free cladding layers. We investigated the gain characteristics in a spectral window of similar to 60 meV and up to 200 K, For current densities ranging from 1 to 8 kA/cm(2), we report a constant gain coefficient of 13 cm/kA at 4K and 6 cm/kA at 200 K, At low temperatures and for current densities above 8 kA/cm(2),we observe gain saturation which we attribute to a reduced electron injection in the active region caused by space charge effects, We report a value of 22 cm(-1) for the waveguide tosses in good agreement with previous measurements.
引用
收藏
页码:736 / 741
页数:6
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