On the luminescence of GaS(Cu) single crystals

被引：21

作者：

Chiricenco, V

Caraman, M

Rusu, II

Leontie, L

机构：

[1] Alexandru Ioan Cuza Univ, Fac Phys, R-6600 Iasi, Romania

[2] Moldavian State Univ, Fac Phys, MD-2009 Kishinev, Moldova

[3] Bacau Univ, Bacau 5500, Romania

来源：

JOURNAL OF LUMINESCENCE | 2003年 / 101卷 / 1-2期

关键词：

GaS; single crystals; Cu impurities; photoluminescence; electroluminescence; excitons;

D O I：

10.1016/S0022-2313(02)00390-3

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The photoluminescence and electroluminescence spectra of undoped and Cu-doped (by means of thermal diffusion) GaS single crystals, at temperatures varying from 293 to 78 K are examined. Some correlations between photoluminescence and absorption spectra of the respective crystals have been established. Cu atoms form up p-photoluminescence recombination levels, positioned at 1.23 and 1.48 eV in the forbidden band of GaS, which produce the photoluminescence band by 1.82eV. The intensity of electroluminescence for GaS(Cu) single crystals exponentially depends on the applied voltage. The electroluminescence spectrum contains impurity bands located at 2.58, 2.13 and 1.63 eV. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：71 / 77

页数：7

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Aliev E. T., 1986, JETP Letters, V43, P566

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