Anisotropic resistivity and Hall effect in MgB2 single crystals -: art. no. 180504

被引：57

作者：

Eltsev, Y ^{[1
]}

Nakao, K ^{[1
]}

Lee, S ^{[1
]}

Masui, T ^{[1
]}

Chikumoto, N ^{[1
]}

Tajima, S ^{[1
]}

Koshizuka, N ^{[1
]}

Murakami, M ^{[1
]}

机构：

[1] ISTEC, Superconduct Res Lab, Koto Ku, Tokyo 1350062, Japan

来源：

PHYSICAL REVIEW B | 2002年 / 66卷 / 18期

关键词：

D O I：

10.1103/PhysRevB.66.180504

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report resistivity and the Hall-effect measurements in the normal and superconducting states of MgB2 single crystals. The resistivity has been found to be anisotropic with slightly temperature-dependent resistivity ratio of about 3.5. The Hall constant, with a magnetic field parallel to the Mg and B sheets, is negative in contrast to the holelike Hall response with a field directed along the c axis, indicating presence of both types of charge carriers and, thus, the multiband electronic structure of MgB2. The Hall effect in the mixed state shows no sign change anomaly, reproducing Hall-effect behavior in clean limit type-II superconductors.

引用

页码：1 / 4

页数：4

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