Surface tension of molten silicon measured by the electromagnetic levitation method under microgravity

被引：54

作者：

Fujii, H ^{[1
]}

Matsumoto, T ^{[1
]}

Hata, N ^{[1
]}

Nakano, T ^{[1
]}

Kohno, M ^{[1
]}

Nogi, K ^{[1
]}

机构：

[1] Osaka Univ, Joining & Welding Res Inst, Ibaraki, Osaka 5670047, Japan

来源：

METALLURGICAL AND MATERIALS TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE | 2000年 / 31卷 / 06期

关键词：

D O I：

10.1007/s11661-000-0168-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The surface tension of molten silicon was measured using the electromagnetic levitation method under microgravity. The atmosphere was Ar-3 pet H-2 purified by Pt asbestos and magnesium perchlorate. The partial oxygen pressure is estimated to be less than 1.1 x 10(-14) Pa. The spherical droplet shape was controlled by changing the current ratio between a quadrupole coil and a dipole coil. The surface tension of molten silicon can be expressed by the equation gamma = 735 - 0.074 (T - 1687) where gamma is the surface tension (in mN/m) and T is the temperature (in K). The value was measured over a wide range of temperatures, from 230 K below the melting point (1687 K) to 1890 K. The scatter of the measured surface-tension values is much less than that measured by conventional methods.

引用

页码：1585 / 1589

页数：5

共 19 条

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[2]

CHUNG SI, 1995, JPN J APPL PHYS, V34, P631

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