Analysis of electrical parameters in heterojunctions based on poly 3-octylthiophene and cadmium sulfide thin films

被引:18
作者
Salinas, Oscar H.
Lopez-Mata, C.
Hu, Hailin
Nicho, M. E.
机构
[1] Univ Nacl Autonoma Mexico, Ctr Invest Energia, Temixco 62580, Morelos, Mexico
[2] Inst Tecnol Zacatepec, Zacatepec, Morelos, Mexico
[3] UAEM, CIICAp, Cuernavaca, Morelos, Mexico
关键词
photovoltaic effect; poly; 3-octythiophene; cadmium sulfide; series and shunt resistance;
D O I
10.1016/j.solmat.2006.03.015
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Planar hybrid heterojunctions were built with poly 3-octylthiophene (P3OT) and chemical bath-deposited cadmium sulfide (CdS) thin films on a conductive glass substrate. The organic material, P3OT, acts as a light absorber and the inorganic one, CdS, as the electron acceptor. Two types of CdS films had been used: one is as-deposited and the other doped with HgO2. Heterojunctions were formed by casting a chemically synthesized P3OT solution onto CdS films. The P3OT film thickness was also varied for heterojunction studies. Current vs. potential (I-V) characterizations under dark and illumination conditions were performed for the P3OT/CdS heterojunctions under 88 mW/cm(2) irradiance level, which show photovoltaic effect with different open circuit voltage (V-OC) levels, being as high as 1V for some devices. A parametric analysis of I-V curves details the effect of CdS resistivity and P3OT film thickness on series and shunt resistance of the heterojunctions. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:2421 / 2428
页数:8
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