Semiconducting Thienothiophene Copolymers: Design, Synthesis, Morphology, and Performance in Thin-Film Organic Transistors

被引:384
作者
McCulloch, Iain [1 ]
Heeney, Martin [2 ]
Chabinyc, Michael L. [3 ]
DeLongchamp, Dean [4 ]
Kline, R. Joseph [4 ]
Coelle, Michael [5 ]
Duffy, Warren [5 ]
Fischer, Daniel [4 ]
Gundlach, David [4 ]
Hamadani, Behrong [4 ]
Hamilton, Rick [1 ]
Richter, Lee [4 ]
Salleo, Alberto [6 ]
Shkunov, Maxim [7 ]
Sporrowe, David [5 ]
Tierney, Steven [5 ]
Zhong, Weimin [5 ]
机构
[1] Univ London Imperial Coll Sci Technol & Med, Dept Chem, London SW7 2AZ, England
[2] Queen Mary Univ London, Dept Mat, London E1 4NS, England
[3] Univ Calif Santa Barbara, Santa Barbara, CA 93106 USA
[4] Natl Inst Stand & Technol, Gaithersburg, MD 20899 USA
[5] Merck Chem, Southampton SO16 7QD, Hants, England
[6] Stanford Univ, Palo Alto, CA 94305 USA
[7] Univ Surrey, Guildford GU2 7XH, Surrey, England
关键词
FIELD-EFFECT TRANSISTORS; REGIOREGULAR POLY(3-HEXYLTHIOPHENE); MOLECULAR-WEIGHT; CARRIER MOBILITY; LARGE-AREA; POLYMERS; POLYTHIOPHENE; DERIVATIVES; FLUORENE; MATRIX;
D O I
10.1002/adma.200801650
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Organic semiconductors are emerging as a viable alternative to amorphous silicon in a range of thin-film transistor devices. With the possibility to formulate these p-type materials as inks and subsequently print into Patterned devices, organic-based transistors offer significant commercial advantages for manufacture, with initial applications such as low performance displays and simple logic being envisaged. Previous limitations of both air stability and electrical performance are now being overcome with a range of both small molecule and polymer-based solution-processable materials, of 0.5 cm(2) V-1 which achieve charge carrier mobilities in excess s(-1) a, benchmark value for amorphous silicon semiconductors. Polymer semiconductors based on thienothiophene copolymers have achieved amongst the highest charge carrier mobilities in solution-processed transistor devices. In this Progress Report, we evaluate the advances and limitations of this class of polymer in transistor devices.
引用
收藏
页码:1091 / 1109
页数:19
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