Hall mobility of amorphous Ge2Sb2Te5

被引：45

作者：

Baily, S. A. ^{[1
]}

Emin, David

Li, Heng

机构：

[1] USAF, Res Lab, Space Vehicles Directorate, Kirtland AFB, NM 87117 USA

[2] Univ New Mexico, Dept Phys & Astron, Albuquerque, NM 87131 USA

[3] Univ Utah, Dept Phys, Salt Lake City, UT 84112 USA

来源：

SOLID STATE COMMUNICATIONS | 2006年 / 139卷 / 04期

关键词：

disordered systems; galvanomagnetic effects;

D O I：

10.1016/j.ssc.2006.05.031

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The electrical conductivity, Seebeck coefficient, and Hall coefficient of three-micron-thick films of amorphous Ge2Sb2Te5 have been measured as functions of temperature from room temperature down to as low as 200 K. The electrical conductivity manifests an Arrhenius behavior. The Seebeck coefficient is p-type with behavior indicative of multi-band transport. The Hall mobility is n-type and low (near 0.07 cm(2)/V s at room temperature). (c) 2006 Elsevier Ltd. All rights reserved.

引用

页码：161 / 164

页数：4

共 25 条

[1]

Adler D., 1971, Critical Reviews in Solid State Sciences, V2, DOI 10.1080/10408437108243545

[2] Ageing effect of Sb2Te3 thin films [J].

Arun, P ;

Tyagi, P ;

Vedeshwar, AG ;

Paliwal, VK .

PHYSICA B-CONDENSED MATTER, 2001, 307 (1-4) :105-110

[3] Transport properties of amorphous antimony telluride [J].

Baily, SA ;

Emin, D .

PHYSICAL REVIEW B, 2006, 73 (16)

[4]

CALLAERTS R, 1970, DISCUSS FARADAY SOC, V50, P27

[5] SMALL POLARONS [J].

EMIN, D .

PHYSICS TODAY, 1982, 35 (06) :34-40

[6]

Emin D., 1980, Hall effect and its applications. Proceedings of the commemorative symposium, P281

[7] HALL MOBILITY OF A SMALL POLARON IN A SQUARE LATTICE [J].

EMIN, D .

ANNALS OF PHYSICS, 1971, 64 (02) :336-&

[8] SIGN OF HALL-EFFECT IN HOPPING CONDUCTION [J].

EMIN, D .

PHILOSOPHICAL MAGAZINE, 1977, 35 (05) :1189-1198

[9]

EMIN D, 2006, IN PRESS PHYS REV B

[10] STUDIES OF POLARON MOTION .3. THE HALL MOBILITY OF THE SMALL POLARON [J].

FRIEDMAN, L ;

HOLSTEIN, T .

ANNALS OF PHYSICS, 1963, 21 (03) :494-549

← 1 2 3 →