Formation of a single interface-near, δ-like Ge nanocluster band in thin SiO2 films using ion-beam synthesis

被引：15

作者：

Klimenkov, M ^{[1
]}

von Borany, J ^{[1
]}

Matz, W ^{[1
]}

Grötzschel, R ^{[1
]}

Herrmann, F ^{[1
]}

机构：

[1] Rossendorf Inc, Forschungszentrum, Inst Ion Beam Phys & Mat Res, D-01314 Dresden, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2002年 / 91卷 / 12期

关键词：

D O I：

10.1063/1.1478795

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The possibility to create a delta-like, interface-near Ge nanocluster band in a 20 nm thin SiO2 layer by ion-beam synthesis is demonstrated. The role of the post-implantation annealing conditions for the formation of Ge nanoclusters in the center of the layer, near the interface, or in both regions is discussed. The presence of hydrogen in the annealing atmosphere accelerates the redistribution of Ge in SiO2. By applying a two-step annealing process, preannealing in hydrogen containing atmosphere at low temperature followed by a rapid thermal annealing at high temperature, the controlled fabrication of a single delta-like, interface-near Ge nanocluster band was achieved. In some clusters [100] lattice planes of Ge were observed. From this and the similar contrast situation for amorphous clusters it is concluded that the interface-near clusters consist of elementary germanium. (C) 2002 American Institute of Physics.

引用

页码：10062 / 10067

页数：6

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