SiC power-switching devices - The second electronics revolution?

被引：308

作者：

Cooper, JA ^{[1
]}

Agarwal, A

机构：

[1] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA

[2] Cree Inc, Durham, NC 27703 USA

来源：

PROCEEDINGS OF THE IEEE | 2002年 / 90卷 / 06期

关键词：

bipolar junction transitors (BJTs); gate turn-off (GTO); junctionfield-effect transistors (JFETs); meta 1-oxide-semiconductor field-effect transistor (MOSFETs); p-i-n diodes; power-switching devices; power transistors; Schottky barrier diodes (SBDs); silicon carbide; thyristors; wide bandgap semiconductors;

D O I：

10.1109/JPROC.2002.1021561

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Silicon carbide (SiC) offers significant advantages for power-switching devices because the critical field for avalanche breakdown is about ten times higher than in silicon. SiC power devices have made remarkable progress in the past five years, demonstrating currents in excess of 100 A and blocking voltages in excess of 19 000 V In this paper, we describe the latest progress in three classes of SiC devices: diodes (p-i-n and Schottky), transistors (junction field-effect transistor metal-oxide-semiconductor field-effect transistor, bipolar junction transistor), and thyristors (gate turn-off).

引用

页码：956 / 968

页数：13

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