Digital Micromirror Device (DMD) hinge memory lifetime reliability modeling

被引:27
作者
Sontheimer, AB [1 ]
机构
[1] Texas Instruments Inc, DLP Prod, Plano, TX 75086 USA
来源
40TH ANNUAL PROCEEDINGS: INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM | 2002年
关键词
D O I
10.1109/RELPHY.2002.996622
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The Digital Micromirror Device (DMD) continues to make significant improvements in high temperature operating lifetime. This paper will briefly describe the DMD, the hinge memory failure mode and parametrics important to characterize hinge memory, provide lifetime estimates and compare results to practical experience. The methods employed to develop an understanding of DMD lifetime are very similar to those used throughout the semiconductor industry to model reliability. While the failure modes and mechanisms may be quite different, the approach of identifying failure modes, accelerating the failures and applying acceleration to estimate lifetime is the same.
引用
收藏
页码:118 / 121
页数:4
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