Abnormal magnetoresistance effect in self-doped Ag2+δTe thin films (δ≤0.25)

被引：27

作者：

Liang, BQ ^{[1
]}

Chen, X ^{[1
]}

Wang, YJ ^{[1
]}

Tang, YJ ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Phys, State Key Lab Magnetism, Beijing 100080, Peoples R China

来源：

PHYSICAL REVIEW B | 2000年 / 61卷 / 05期

关键词：

D O I：

10.1103/PhysRevB.61.3239

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report an abnormal room-temperature magnetoresistance behavior in self-doped Ag2+deltaTe films with Ag doping concentration delta less than or equal to 0.25. Both positive magnetoresistance and negative magnetoresistance are found with the magnetic field applied along perpendicular to the sample surface and opposite direction, respectively. It is also evident from our study that such magnetoresistance (MR) behavior is strongly dependent on the doping concentration delta and the annealing time. The origin of the MR behavior is discussed and tentatively ascribed to the complex structure of the films, which is analyzed by x-ray measurement.

引用

页码：3239 / 3242

页数：4

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