High-temperature solution growth of Cr2+ : CdSe for tunable mid-IR laser application

被引:14
作者
Ndap, JO [1 ]
Adetunji, OO
Chattopadhyay, K
Rablau, CI
Egarievwe, SU
Ma, X
Morgan, S
Burger, A
机构
[1] Fisk Univ, Dept Phys, Ctr Photon Mat & Devices, Nashville, TN 37208 USA
[2] W Virginia Univ, Dept Phys, Morgantown, WV 26506 USA
基金
美国国家航空航天局; 美国国家科学基金会;
关键词
II-VI compounds; solution growth; effective segregation coefficient; mid-IR tunable lasers; emission lifetime;
D O I
10.1016/S0022-0248(99)00790-3
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Solid-state tunable laser sources in the mid-IR region have been recently investigated for their potential in remote sensing applications. Room temperature lasers based on single crystals of chrominm-doped CdSe are particularly interesting due to their broad band tunability beyond 2 mu m spectral region. In this study, we have grown doped single crystals by the high-temperature gradient freezing solution technique, using selenium as the solvent. Crystals of 1.2 cm in diameter and up to 7 cm long, cracks and precipitates free could be obtained. The effective segregation coefficient of Cr2+ ions along the ingot was evaluated. Room temperature emission lifetime values of 3.0-4.5 mu s were measured. (C) 2000 Published by Elsevier science B.V. All rights reserved.
引用
收藏
页码:290 / 294
页数:5
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