Computational design of carbon nanotube electromechanical pressure sensors

被引：67

作者：

Wu, JA ^{[1
]}

Zang, J

Larade, B

Guo, H

Gong, XG

Liu, F

机构：

[1] Tsinghua Univ, Ctr Adv Study, Beijing 100084, Peoples R China

[2] Univ Utah, Dept Mat Sci & Engn, Salt Lake City, UT 84112 USA

[3] McGill Univ, Dept Phys, Montreal, PQ H3A 2T8, Canada

[4] Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China

来源：

PHYSICAL REVIEW B | 2004年 / 69卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.69.153406

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigate electronic transport properties of single-walled carbon nanotubes (SWNT's) under hydrostatic pressure, using first-principles quantum transport calculations aided by molecular-dynamics simulation and continuum mechanics analysis. We demonstrate a pressure-induced metal-to-semiconductor transition in armchair SWNT's, which provides a basis for designing nanoscale tunable pressure sensors.

引用

页码：153406 / 1

页数：4

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