Ga, N solubility limit in co-implanted ZnO measured by secondary ion mass spectrometry

被引：36

作者：

Komatsu, M ^{[1
]}

Ohashi, N ^{[1
]}

Sakaguchi, I ^{[1
]}

Hishita, S ^{[1
]}

Haneda, H ^{[1
]}

机构：

[1] NIRIM, COMET, Tsukuba, Ibaraki 3050044, Japan

来源：

APPLIED SURFACE SCIENCE | 2002年 / 189卷 / 3-4期

关键词：

the p-type zinc oxide; ion implantation; solubility limit; SIMS;

D O I：

10.1016/S0169-4332(01)01026-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The solubility limits of Ga and N in ZnO were evaluated via secondary ion mass spectrometry (SIMS). ZnO single crystals were implanted with Ga+ and/or N+ ions at room temperature. The implanted samples were subsequently annealed at a temperature of 850 degreesC in O-2 atmosphere. The values of solubility limit for Ga and N were evaluated from the plateau in the depth profile of the concentrations. We found that the N solubility limit increases by a factor of 400-0.16 atom% in the co-implanted ZnO compared with that in N-implanted sample without Ga. The formation of ZnGa2O4 and the swelling of N-2 were also observed in the cross sectional TEM images after annealing. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：349 / 352

页数：4

共 15 条

[1] OPTICAL AND ELECTRICAL-PROPERTIES OF RADICAL BEAM GETTERING EPITAXY GROWN N-TYPE AND P-TYPE ZNO SINGLE-CRYSTALS [J].