Bandgap closure of a flattened semiconductor carbon nanotube: A first-principles study

被引：93

作者：

Mazzoni, MSC ^{[1
]}

Chacham, H ^{[1
]}

机构：

[1] Univ Fed Minas Gerais, ICEx, Dept Fis, BR-30123970 Belo Horizonte, MG, Brazil

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 12期

关键词：

D O I：

10.1063/1.126096

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigate, through first-principles calculations, the effects of a flattening distortion on the electronic properties of a semiconductor carbon nanotube. The flattening causes a progressive reduction of the band gap from 0.92 eV to zero. The band-overlap insulator-metal transition occurs for an interlayer distance of 4.6 Angstrom. Supposing that the flattening of the nanotube can be produced by a force applied by a scanning microscope tip, we estimate that the force per unit length of the nanotube that is necessary to reach the insulator-metal transition is 7.4 N/m. (C) 2000 American Institute of Physics. [S0003-6951(00)03512-9].

引用

页码：1561 / 1563

页数：3

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