Magnetoresistance of atomic-sized contacts:: An ab initio study -: art. no. 064410

被引:35
作者
Bagrets, A [1 ]
Papanikolaou, N
Mertig, I
机构
[1] Max Planck Inst Mikrostrukturphys, D-06120 Halle An Der Saale, Germany
[2] Univ Halle Wittenberg, Fachbereich Phys, D-06099 Halle An Der Saale, Germany
[3] NCSR Demokritos, Inst Microelect, GR-15310 Athens, Greece
关键词
D O I
10.1103/PhysRevB.70.064410
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The magnetoresistance (MR) effect in metallic atomic-sized contacts is studied theoretically by means of first-principle electronic structure calculations. We consider three-atom chains formed from Co, Cu, Si, and Al atoms suspended between semi-infinite Co leads. We employ the screened Korringa-Kohn-Rostoker Green's function method for the electronic structure calculation and evaluate the conductance in the ballistic limit using the Landauer approach. The conductance through the constrictions reflects the spin-splitting of the Co bands and causes high MR ratios, up to 50%. The influence of the structural changes on the conductance is studied by considering different geometrical arrangements of atoms forming the chains. Our results show that the conductance through s-like states is robust against geometrical changes, whereas the transmission is strongly influenced by the atomic arrangement if p or d states contribute to the current.
引用
收藏
页码:064410 / 1
页数:6
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