High rate deposition of mu c-Si with plasma gun CVD

High rate deposition of microcrystalline silicon using direct current are plasma gun chemical vapor deposition was investigated. A sheet like plasma was produced using a DC arc plasma gun and a magnetic field. An important feature of this plasma was that it was produced using high current and low voltage. By increasing the plasma density and flow rate of feed gas (silane) a deposition rate of 1.5 nm/s micro-crystalline silicon was achieved.