Low-temperature visible photoluminescence spectra of TlGaSe2 layered crystal

被引：27

作者：

Gasanly, NM ^{[1
]}

Serpengüzel, A

Aydinli, A

Baten, SMA

机构：

[1] Middle E Tech Univ, Dept Phys, TR-06531 Ankara, Turkey

[2] Bilkent Univ, Dept Phys, TR-06533 Ankara, Turkey

来源：

JOURNAL OF LUMINESCENCE | 2000年 / 86卷 / 01期

关键词：

semiconductors; photoluminescence; impurity level; TlGaSe2;

D O I：

10.1016/S0022-2313(99)00174-X

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The photoluminescence (PL) spectra of TlGaSe2 layered single crystals were investigated in the 8.5-35 K temperature, 0.2-15.2 W cm(-2) excitation laser intensity, and in the 600-700 nm wavelength range. The PL spectrum has a slightly asymmetric Gaussian lineshape with a peak position located at 1.937 eV (640 nm) at 8.5 K. The PL is quenched with increasing temperature. The blue shift of the PL peak and the sublinear increase of the PL intensity with increasing laser intensity is explained using the inhomogenously spaced donor-acceptor pair recombination model. Analysis of the data indicates that the PL band is due to donor-acceptor recombination. A shallow acceptor level and a moderately deep donor level are, respectively, introduced at 0.012 eV above the top of the valence band and ar 0.317 eV below the bottom of the conduction band. An energy-level diagram for radiative donor-acceptor pair recombination in TlGaSe2 layered single crystals is proposed (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：39 / 43

页数：5

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