Electronic and chemical properties of cathode structures using 4,7-diphenyl-1,10-phenanthroline doped with rubidium carbonate as electron injection layers

被引：32

作者：

Chen, Mei-Hsin ^{[1
,2
]}

Chen, Yu-Hung ^{[1
,2
]}

Lin, Chang-Tin ^{[1
,2
]}

Lee, Guan-Ru ^{[1
,2
]}

Wu, Chih-I ^{[1
,2
]}

Leem, Dong-Seok ^{[3
]}

Kim, Jang-Joo ^{[3
]}

Pi, Tun-Wen ^{[4
]}

机构：

[1] Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan

[2] Natl Taiwan Univ, Grad Inst Photon & Optoelect, Taipei 10617, Taiwan

[3] Seoul Natl Univ, Dept Mat Sci & Engn, Ctr Organ Light Emitting Diode, Seoul 151742, South Korea

[4] Natl Synchrotron Radiat Res Ctr, Hsinchu 300, Taiwan

来源：

JOURNAL OF APPLIED PHYSICS | 2009年 / 105卷 / 11期

关键词：

DEVICES; MOBILITY; DIODES;

D O I：

10.1063/1.3143718

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electronic properties and chemical interactions of cathode structures using 4,7-diphenyl-1,10-phenanthroline (Bphen) doped with rubidium carbonate (Rb2CO3) as electron injection layers were investigated. Current-voltage characteristics reveal that the devices with Bphen/Rb2CO3/Al as cathode structures possess better electron injection efficiency than those with cathode structures of Bphen/LiF/Al. Ultraviolet and x-ray photoemission spectroscopy shows that n-type doping effects resulting from Rb2CO3 and the gap states created by aluminum deposition are both keys to the improved carrier injection efficiency. Moreover, theoretical calculation indicates that the chemical reaction between aluminum and the nitrogen atoms in Bphen is the origin of the gap states. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3143718]

引用

页数：4

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