Electrical characterization of Fermi level pinning in metal/3,4,9,10 perylenetetracarboxylic dianhydride interfaces

被引：18

作者：

Agrawal, Ruchi ^{[1
]}

Ghosh, Subhasis ^{[1
]}

机构：

[1] Jawaharlal Nehru Univ, Sch Phys Sci, New Delhi 110067, India

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 22期

关键词：

D O I：

10.1063/1.2398930

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Systematic studies of current injection from different metal electrodes to metal/3,4,9,10 perylenetetracarboxylic dianhydride (PTCDA) interfaces have been carried out. It has been observed that the barrier for carrier injection cannot be explained by simple vacuum alignment scheme. Moreover, injection barrier is almost independent of metal work function. These observations are explained by the changes of barrier height due to interface dipole barrier which compensate for the difference of work function of PTCDA and metals, leading to metal independent injection barrier and Fermi level pinning at metal/PTCDA interfaces. (c) 2006 American Institute of Physics.

引用

页数：3

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