Processing and structure of gallium nitride-gallium oxide platelet nanostructures

被引：10

作者：

Tong, J ^{[1
]}

Risbud, SH ^{[1
]}

机构：

[1] Univ Calif Davis, Dept Chem Engn & Mat Sci, Davis, CA 95616 USA

来源：

JOURNAL OF SOLID STATE CHEMISTRY | 2004年 / 177卷 / 10期

基金：

美国国家科学基金会;

关键词：

GaN; Ga2O3; nanoparticles; core-shell structure; quantum confinement effect; quantum well; yellow emission; surface passivation; controlled oxidation;

D O I：

10.1016/j.jssc.2004.06.025

中图分类号：

O61 [无机化学];

学科分类号：

070301 ; 081704 ;

摘要：

Gallium nitride-gallium oxide structures were formed by heat-treating gallium nitride (GaN) powders in several gas environments at temperatures from 400degreesC to 900degreesC. The platelet nanostructured particles were examined at several stages of oxidation by microscopic, structural, chemical and optical spectroscopic techniques. Particle morphology, nanophase characterization and photoluminescence data showed that the oxide layers passivate the GaN platelets surfaces and significantly reduce the yellow emission while enhancing near band-edge emission. (C) 2004 Elsevier Inc. All rights reserved.

引用

页码：3568 / 3574

页数：7

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