Quantum Chemical Modeling of Photoabsorption Properties of Two- and Three-Nitrogen Vacancy Point Defects in Diamond

被引:21
作者
Zyubin, A. S. [2 ]
Mebel, A. M. [1 ]
Hayashi, M. [3 ]
Chang, H. C. [4 ]
Lin, S. H. [5 ,6 ]
机构
[1] Florida Int Univ, Dept Chem & Biochem, Miami, FL 33199 USA
[2] Russian Acad Sci, Inst Problems Chem Phys, Chernogolovka 142432, Moscow Region, Russia
[3] Natl Taiwan Univ, Ctr Condensed Matter Sci, Taipei 10764, Taiwan
[4] Acad Sinica, Inst Atom & Mol Sci, Taipei 106, Taiwan
[5] Natl Chiao Tung Univ, Dept Appl Chem, Hsinchu, Taiwan
[6] Natl Chiao Tung Univ, Inst Mol Sci, Hsinchu, Taiwan
关键词
N-V CENTER; POTENTIAL-ENERGY SURFACES; ELECTRONIC-STRUCTURE; EXCITATION-ENERGIES; OPTICAL-PROPERTIES; EXCITED-STATES; COLOR-CENTERS; SPECTROSCOPY; SPECTRA; PHOTOLUMINESCENCE;
D O I
10.1021/jp9012703
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Quantum chemical calculations of the geometric and electronic structures and vertical transition energies for several low-lying excited states of the neutral and negatively charged vacancy-related point defects in diamond containing two and three nitrogen atoms (N2V0, N2V-, and N3V0) have been performed employing various theoretical methods (time-dependent density functional theory, equation-of-motion coupled cluster, and multireference perturbation theory) and different basis sets and using C21H28, C35H36, and C51H52 finite model clusters. In the;round states, the vacancy-related atoms are found to be shifted away from the vacancy center by similar to 0.1 angstrom, whereas the positions of atoms from the second layer around them vacancy remain nearly unchanged, indicating a local character of geometry relaxation due to defects. The lowest excited states are formed with participation of the stretched (N2V) or broken (N3V) C-C bond and nonbonding combinations of nitrogen lone pairs as donors, with the C-C antibonding molecular orbital (MO) in N2V0, broken C-C bond in N3V0, and diffuse vacancy-related MOs serving as acceptors. Normally, the first excited states have a valence character, but the diffuse states are rather close in energy, especially for N3V0 (2(2)A(1) and 1(2)E excited states). The first optically active excitation in the N2V0 defect with the calculated energy of similar to 2.6 eV (in close agreement with the experiment) is formed by the electronic transition from the stretched C-C bond to the antibonding C-C MO, with an additional contribution from the combination of nitrogen lone pairs. For the negatively charged N2V- system, the lowest excitation to the 1(2)A(1) state is predicted to occur from the singly occupied antibonding b(1) MO to the empty diffuse a(1) orbital, but the CASPT2 calculated excitation energy, similar to 0.9 eV, underestimates the experimental zero phonon line observed at 1.26 eV. The lowest excited states of N3V0, 2(2)A(1), and 1(2)E correspond to transitions from the singly occupied MO (SOMO) to the diffuse lowest vacant orbital and from the nonbonding combination of nitrogen lone pairs to SOMO, respectively, and have similar energies of about 3.1-3.3 eV, in agreement with the experimental photoabsorption band maximum at similar to 3 eV.
引用
收藏
页码:10432 / 10440
页数:9
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