Comparison of sensitivity and exposure latitude for polymethylmethacrylate, UVIII, and calixarene using conventional dip and ultrasonically assisted development

被引：16

作者：

Yasin, S ^{[1
]}

Hasko, DG ^{[1
]}

Ahmed, H ^{[1
]}

机构：

[1] Univ Cambridge, Cavendish Lab, Microelect Res Ctr, Cambridge CB3 0HE, England

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1999年 / 17卷 / 06期

关键词：

D O I：

10.1116/1.591016

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Experiments are reported on the characteristics of electron-beam exposed polymethylmethacrylate (PMMA), UVIII, and calixarene resists for ultrasonically assisted development and conventional dip development. Ultrasonically assisted development provides improvements in sensitivity and contrast compared to conventional dip development, for the same development time in the case of 10 mu m wide features in PMMA and UVIII, whereas no appreciable change is seen for calixarene. Also, we observe a substantial improvement in exposure dose latitude for smaller linewidths with ultrasonically assisted development compared to dip development for PMMA, UVIII, and calixarene. This improvement decreases somewhat as the linewidth increases. The increases in sensitivity and exposure dose latitude may be significant also in improving ultimate resolution. Isolated lines of 36 nm width have been obtained with UVIII using ultrasonically assisted development. (C) 1999 American Vacuum Society. [S0734-211X(99)08206-2].

引用

页码：3390 / 3393

页数：4

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