Colloidal Quantum-Dot Photodetectors Exploiting Multiexciton Generation

被引：545

作者：

Sukhovatkin, Vlad ^{[1
]}

Hinds, Sean ^{[1
]}

Brzozowski, Lukasz ^{[1
]}

Sargent, Edward H. ^{[1
]}

机构：

[1] Univ Toronto, Dept Elect & Comp Engn, Toronto, ON M5S 3G4, Canada

来源：

SCIENCE | 2009年 / 324卷 / 5934期

基金：

加拿大创新基金会; 加拿大自然科学与工程研究理事会;

关键词：

MULTIPLE EXCITON GENERATION; SOLAR-CELLS; IMPACT IONIZATION; SEMICONDUCTOR NANOCRYSTALS; CARRIER MULTIPLICATION; INFRARED PHOTOVOLTAICS; ELECTRICAL-PROPERTIES; EFFICIENCY; PBSE; LEAD;

D O I：

10.1126/science.1173812

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Multiexciton generation (MEG) has been indirectly observed in colloidal quantum dots, both in solution and the solid state, but has not yet been shown to enhance photocurrent in an optoelectronic device. Here, we report a class of solution-processed photoconductive detectors, sensitive in the ultraviolet, visible, and the infrared, in which the internal gain is dramatically enhanced for photon energies E-photon greater than 2.7 times the quantum-confined bandgap E-bandgap. Three thin-film devices with different quantum-confined bandgaps (set by the size of their constituent lead sulfide nanoparticles) show enhancement determined by the bandgap-normalized photon energy, E-photon/E-bandgap, which is a clear signature of MEG. The findings point to a valuable role for MEG in enhancing the photocurrent in a solid-state optoelectronic device. We compare the conditions on carrier excitation, recombination, and transport for photoconductive versus photovoltaic devices to benefit from MEG.

引用

页码：1542 / 1544

页数：3

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