Focused Electron-Beam-Induced Deposition of 3 nm Dots in a Scanning Electron Microscope

被引：73

作者：

van Kouwen, Leon ^{[1
]}

Botman, Aurelien ^{[1
]}

Hagen, Cornelis W. ^{[1
]}

机构：

[1] Delft Univ Technol, Fac Sci Appl, NL-2628 CJ Delft, Netherlands

来源：

NANO LETTERS | 2009年 / 9卷 / 05期

关键词：

RESOLUTION LIMIT; GROWTH;

D O I：

10.1021/nl900717r

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Electron-beam-induced deposition allows the creation of three-dimensional nanodevices within a scanning electron microscope. Typically the dimensions of the fabricated structure are from 20 nm to several micrometers. Until now the record for the smallest deposited feature in an SEM was 3.5 nm, measured by an indirect method. We have achieved a nanodot having a full width half-maximum of 2.8 +/- 0.3 nm, measured directly in the same microscope after deposition.

引用

页码：2149 / 2152

页数：4

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