The junction characteristics of carbonaceous film/n-type silicon (C/n-Si) layer photovoltaic cell

The junction capacitance for a carbonaceous thin-film/n-type silicon layer photovoltaic cell made by chemical vapor deposition of 2,5-dimethyl-p-benzoquinone on a silicon substrate at 500 degrees C was measured, and an energy band diagram for this junction was sought out, The result confirms that the carbonaceous thin-film/n-type silicon junction is a heterotype junction. Its junction barrier is about 0.54 eV. This junction shows a depletion laver of about 1.1 mu m in thickness at zero bias voltage, and most all of which was established in the silicon substrate. A work function of about 5.0 eV for the carbonaceous film was estimated based on the energy-band diagram of this junction. (C) 1996 American Institute of Physics.