Functional graded high-K (Ba1-xSrx)TiO3 thin films for capacitor structures with low temperature coefficient

被引:31
作者
Slowak, R [1 ]
Hoffmann, S
Liedtke, R
Waser, R
机构
[1] RWTH Aachen Univ Technol, Inst Fuer Werkstoffe Elektrotech, D-52056 Aachen, Germany
[2] Forschungszentrum Julich, Inst Fuer Festkoerperforsch IFF EKM, D-52425 Julich, Germany
关键词
functional graded thin films; temperature coefficient; interdigital electrode configuration; thin film capacitor structures;
D O I
10.1080/10584589908215589
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The high dielectric constant of perovskite-type alkaline earth titanates makes them attractive for use in integrated thin film capacitors for microwave circuits. The application temperatures of those devices such as resonators, filters and phase shifters range from cryogenic temperatures for superconducting devices up to 250 degrees C for semiconducting ICs. Significant material modifications have to be introduced to bring the pure components such as BaTiO3 and SrTiO3 into formulations which have a suitable temperature coefficient of the dielectric constant. For conventional powder based industrial processes, usually solid solution adaptations and heterogeneous mixtures are employed. The deposition processes of thin films, especially the low cost Chemical Solution Deposition (CSD) technique, offer the possibility to build thin films of graded compositions. We will show that in those films the composition gradient can be tailored in order to fit the designated temperature characteristics.
引用
收藏
页码:169 / 179
页数:11
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