Ultrafast decay of coherent plasmon-phonon coupled modes in highly doped GaAs

被引:63
作者
Hase, M
Nakashima, S
Mizoguchi, K
Harima, H
Sakai, K
机构
[1] Osaka Univ, Dept Appl Phys, Suita, Osaka 5650871, Japan
[2] CRL, Kansai Adv Res Ctr, Nishi Ku, Kobe, Hyogo 6512401, Japan
关键词
D O I
10.1103/PhysRevB.60.16526
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report on the ultrafast decay of coherently excited plasmon-phonon coupled modes in a highly doped n-GaAs. Coherent oscillations of the upper branch (L+) as well as the lower branch (L-) of the coupled modes have been observed by a femtosecond pump-probe technique with 20 fs ultrashort laser pulses. The decay time of the L+ mode estimated from a time partitioning Fourier transform spectra reveals that the decay rate increases Linearly with increasing photoexcited carrier density. This result leads to a conclusion that the ultrafast decay of the coherent L+ mode is mainly caused by loss of coherence in electron-hole plasmas when the photoexcited carrier density is higher than doping levels. [S0163-1829(99)01048-6].
引用
收藏
页码:16526 / 16530
页数:5
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