Detection of deposition rate of plasma-polymerized silicon-containing films by quartz crystal microbalance

被引:14
作者
Kurosawa, S
Aizawa, H
Miyake, J
Yoshimoto, M
Hilborn, J
Talib, ZA
机构
[1] Natl Inst Adv Ind Sci & Technol, AIST, Photon Res Inst, Tsukuba, Ibaraki 3058565, Japan
[2] Natl Inst Adv Ind Sci & Technol, AIST, Human Stress Signal Res Ctr, Tsukuba, Ibaraki 3058565, Japan
[3] Natl Inst Adv Ind Sci & Technol, AIST, Tissue Engn Res Ctr, Tsukuba, Ibaraki 3058565, Japan
[4] Kagoshima Univ, Kagoshima 8900065, Japan
[5] Uppsala Univ, SE-75121 Uppsala, Sweden
[6] Univ Putra Malaysia, Serdang 43400, Selangor, Malaysia
关键词
plasma processing and deposition; quartz crystal microbalance; coatings; polymers;
D O I
10.1016/S0040-6090(02)00003-2
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The deposition rates of plasma-polymerized (pp-) films of vinyltriethoxysilane, vinyltrimethysilane, tetravinylsilane, diallyldimethylsilane, allyltrimethylsilane, 1,3-divinyltetramethyldisiloxane and 1,1,3,3-tetramethyl-1,3-divinyldisilazane were determined by the quartz crystal microbalance (QCM) technique. Using the same polymerization conditions (100 W RF and 100 Pa vapor pressure) for the various monomers, it was found that the deposition rates were proportional to the polymerization time. The average deposition rate of pp-vinyltrimethylsilane was 2.44 mug/min. The average deposition rate of pp-1,3-divinyltetramethyldisiloxane was five-fold higher and that of pp-tetravinylsilane was 13.5-fold higher than that of pp-vinyltrimethylsilane. The average deposition rate of pp-allyltrimethylsilane was 3.43 mug/min. The average deposition rate of pp-diallyldimethylsilane was 0.8-fold higher. The average deposition rate depended on the chemical structure of the monomer, giving rise to different mechanisms of polymerization. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:1 / 6
页数:6
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