Overall kinetics of SiOx remote-PECVD using different organosilicon monomers

被引:12
作者
Bayer, C [1 ]
Bapin, E [1 ]
von Rohr, PR [1 ]
机构
[1] ETH Zurich, Inst Proc Engn, CH-8092 Zurich, Switzerland
关键词
deposition rate; modeling; organosilicon; PECVD; silicon dioxide;
D O I
10.1016/S0257-8972(99)00318-7
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
An experimental study was performed using nine different organosilicon monomers for the deposition of silicon oxide films by remote plasma-enhanced CVD. The measured deposition rates are interpreted with a previously developed semi-empirical model. The model enables the estimation of the critical how rates of oxygen atoms necessary to achieve a complete monomer conversion. The critical flow rates can be correlated to the monomer structure. Starting from tetramethoxysilane and tetraethoxysilane, the critical flow rates of oxygen atoms increase when alkoxy groups are replaced by alkyl groups. A comparison between the methoxy/methyl and the ethoxy/ethyl series shows that monomers containing ethoxy groups are easier to deposit than those containing methoxy groups. These observations are discussed with respect to the possible reaction mechanism. (C) 1999 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:874 / 878
页数:5
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