Rare-earth-doped GaN switchable color electroluminescent devices

被引:18
作者
Heikenfeld, J [1 ]
Steckl, AJ [1 ]
机构
[1] Univ Cincinnati, Nanoelect Lab, Cincinnati, OH 45221 USA
关键词
display; electroluminescence; GaN; phosphor; switchable color;
D O I
10.1109/TED.2002.802663
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Switchable color (SC) light emission has been obtained from thin-film electroluminescent devices (ELDs) which use green Er- and red Eu-doped GaN phosphors. These two-electrode SCELDs can switch color through variation of applied bias. Different SCELD structures, which share in common a stacked GaN: Er/GaN: Eu phosphor layer, can be implemented for use with dc or ac operation. A single SCELD can emit green (537/558 nm), red (622 nm), yellow, and orange. For the DC-SCELD, an electrically rectifying GaN/p-Si interface allows polarity-dependent current paths, which induce selective luminescence of red or green phosphor layers. For the AC-SCELD, as the bias frequency is increased, bright red emission from GaN : Eu saturates while green emission from GaN : Er increases and becomes dominant. The AC-SCELD exhibits brightness levels >10 cd/m(2) and can change chromaticity coordinates by as much as Deltax > 0.32 and Deltay > 0.33. Application of these devices to switching between other visible and/or infrared wavelengths is envisioned based on appropriate choice of luminescent dopants in the GaN layers.
引用
收藏
页码:1545 / 1551
页数:7
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