''Gate-to-gate'' BJT obtained from the double-gate input JFET to reset charge preamplifiers

被引:5
作者
Fazzi, A [1 ]
Rehak, P [1 ]
机构
[1] BROOKHAVEN NATL LAB,UPTON,NY 11973
关键词
D O I
10.1016/0168-9002(96)00238-0
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
A novel charge restoration mechanism to reset charge sensitive preamplifiers is presented. The ''gate-to-gate'' Bipolar Junction Transistor transversal to the input JFET with independent top and bottom gates is exploited as a ''reset transistor'' embodied in the preamplifier input device. The p-n junction between the bottom gate and the channel is forward-biased by a proper feedback loop supplying the necessary restoration current to the input node capacitance through the top gate-channel reversed-biased junction. The continuous reset mode is here analysed with reference to the DC stability, the pulse response and the noise behaviour. Experimental results are reported.
引用
收藏
页码:453 / 458
页数:6
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