Zero-field spin splitting in InAs-AlSb quantum wells revisited

被引:75
作者
Brosig, S [1 ]
Ensslin, K
Warburton, RJ
Nguyen, C
Brar, B
Thomas, M
Kroemer, H
机构
[1] Swiss Fed Inst Technol, Solid State Phys Lab, CH-8093 Zurich, Switzerland
[2] Univ Munich, Sekt Phys, D-80539 Munich, Germany
[3] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
来源
PHYSICAL REVIEW B | 1999年 / 60卷 / 20期
关键词
D O I
10.1103/PhysRevB.60.R13989
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present magnetotransport experiments on high-quality InAs-AlSb quantum wells that show a perfectly clean single-period Shubnikov-de Haas oscillation down to very low magnetic fields. In contrast to theoretical expectations based on an asymmetry induced zero-field spin splitting, no beating effect is observed. The carrier density has been changed by the persistent photoconductivity effect as well as via the application of hydrostatic pressure in order to influence the electric field at the interface of the electron gas. Still no indication of spin splitting at zero magnetic field was observed in spite of highly resolved Shubnikov-de Haas oscillations up to filling factors of 200. This surprising and unexpected result is discussed in view of other recently published data. [S0163-1829(99)51244-7].
引用
收藏
页码:13989 / 13992
页数:4
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