Dielectric effect of a thin SiO2 interlayer at the interface between silicon and high-k oxides

被引：25

作者：

Giustino, F ^{[1
]}

Umari, P

Pasquarello, A

机构：

[1] Ecole Polytech Fed Lausanne, Inst Theorie Phenomenes Phys, ITP, CH-1015 Lausanne, Switzerland

[2] Inst Romand Rech Numer Phys Mat, CH-1015 Lausanne, Switzerland

来源：

MICROELECTRONIC ENGINEERING | 2004年 / 72卷 / 1-4期

关键词：

Si/SiO2; interface; dielectric constant; high-k dielectrics; density functional theory;

D O I：

10.1016/j.mee.2004.01.011

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigate the dielectric permittivity of SiO2 on Si(100) substrates using a first-principles approach. It is shown that both the static and high-frequency dielectric constants of the oxide overlayer increase when the oxide thickness is reduced. This behavior of the overlayer is found to be well reproduced by a classical two-layer model in which the pure oxide and the suboxide layer are treated as distinct dielectrics. Implications for interfaces between silicon and high-k gate oxides are discussed. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：299 / 303

页数：5

共 16 条

[1] UNIFIED APPROACH FOR MOLECULAR-DYNAMICS AND DENSITY-FUNCTIONAL THEORY [J].

CAR, R ;

PARRINELLO, M .

PHYSICAL REVIEW LETTERS, 1985, 55 (22) :2471-2474

[2] Generalized-gradient approximations to density-functional theory: A comparative study for atoms and solids [J].

DalCorso, A ;

Pasquarello, A ;

Baldereschi, A ;

Car, R .

PHYSICAL REVIEW B, 1996, 53 (03) :1180-1185

[3] Field effect transistors with SrTiO3 gate dielectric on Si [J].

Eisenbeiser, K ;

Finder, JM ;

Yu, Z ;

Ramdani, J ;

Curless, JA ;

Hallmark, JA ;

Droopad, R ;

Ooms, WJ ;

Salem, L ;

Bradshaw, S ;

Overgaard, CD .

APPLIED PHYSICS LETTERS, 2000, 76 (10) :1324-1326

[4] HfO2 gate dielectric with 0.5 nm equivalent oxide thickness [J].

Harris, H ;

Choi, K ;

Mehta, N ;

Chandolu, A ;

Biswas, N ;

Kipshidze, G ;

Nikishin, S ;

Gangopadhyay, S ;

Temkin, H .

APPLIED PHYSICS LETTERS, 2002, 81 (06) :1065-1067

[5] The electronic structure at the atomic scale of ultrathin gate oxides [J].

Muller, DA ;

Sorsch, T ;

Moccio, S ;

Baumann, FH ;

Evans-Lutterodt, K ;

Timp, G .

NATURE, 1999, 399 (6738) :758-761

[6] Atomic scale measurements of the interfacial electronic structure and chemistry of zirconium silicate gate dielectrics [J].

Muller, DA ;

Wilk, GD .

APPLIED PHYSICS LETTERS, 2001, 79 (25) :4195-4197

[7] ABINITIO MOLECULAR-DYNAMICS FOR D-ELECTRON SYSTEMS - LIQUID COPPER AT 1500-K [J].

PASQUARELLO, A ;

LAASONEN, K ;

CAR, R ;

LEE, CY ;

VANDERBILT, D .

PHYSICAL REVIEW LETTERS, 1992, 69 (13) :1982-1985

[8] Theory of Si 2p core-level shifts at the Si(001)-SiO2 interface [J].

Pasquarello, A ;

Hybertsen, MS ;

Car, R .

PHYSICAL REVIEW B, 1996, 53 (16) :10942-10950

[9] ATOMS, MOLECULES, SOLIDS, AND SURFACES - APPLICATIONS OF THE GENERALIZED GRADIENT APPROXIMATION FOR EXCHANGE AND CORRELATION [J].

PERDEW, JP ;

CHEVARY, JA ;

VOSKO, SH ;

JACKSON, KA ;

PEDERSON, MR ;

SINGH, DJ ;

FIOLHAIS, C .

PHYSICAL REVIEW B, 1992, 46 (11) :6671-6687

[10] Electrical and materials properties of ZrO2 gate dielectrics grown by atomic layer chemical vapor deposition [J].

Perkins, CM ;

Triplett, BB ;

McIntyre, PC ;

Saraswat, KC ;

Haukka, S ;

Tuominen, M .

APPLIED PHYSICS LETTERS, 2001, 78 (16) :2357-2359

← 1 2 →