First principles modeling of high field transport in wide-band-gap materials

被引：5

作者：

Dür, M

Goodnick, SM

Redmer, R

Reigrotzki, M

Fitzer, N

Städele, M

机构：

[1] Arizona State Univ, Dept Elect Engn, Tempe, AZ 85287 USA

[2] Univ Rostock, Fachbereich Phys, D-18051 Rostock, Germany

[3] Univ Illinois, Beckman Inst, Urbana, IL 61801 USA

来源：

PHYSICA B | 1999年 / 272卷 / 1-4期

关键词：

wide-band-gap materials; Monte Carlo method;

D O I：

10.1016/S0921-4526(99)00291-4

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

In the present work, we have theoretically investigated the electronic and transport properties of three wide-band-gap materials, ZnS, SrS, and GaN, using full-hand ensemble Monte Carlo (EMC) simulation. We show a suppression of the hole impact ionization rate for ZnS and SrS in particular, and GaN to a lesser extent, due to the narrowness of the upper valence bands. The resulting impact ionization coefficient for electrons in ZnS simulated using the EMC with microscopically calculated phonon scattering rates is in good agreement with the re-interpreted data of Thompson and Alien (J. Phys. C: Solid State Phys. 20 (1987) L499). (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：295 / 298

页数：4

共 10 条

[1] High-field transport and electroluminescence in ZnS phosphor layers [J].