A 600 VSiC trench JFET

被引：12

作者：

Gupta, RN ^{[1
]}

Chang, HR ^{[1
]}

Hanna, E ^{[1
]}

Bui, C ^{[1
]}

机构：

[1] Rockwell Sci Co, Thousand Oaks, CA 91360 USA

来源：

SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS | 2002年 / 389-3卷

关键词：

600V; FETs; JFETs; low loss; MOSFETs; SiC;

D O I：

10.4028/www.scientific.net/MSF.389-393.1219

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The quest for a high voltage silicon carbide (SiC) FET continues with significant improvements yet to be made. The inversion channel MOSFET has the disadvantage of unacceptably low channel mobility. Many structures have been proposed in the past to alleviate this problem. Among them the accumulation channel MOSFET and JFET have been the most successful. We have realized a trench vertical JFET (4H-SiC) with a blocking voltage of 600V and specific on-resistance of 5mOmega-cm(2). 2A FETs with an average on-voltage of 1V and 40% yield are also demonstrated. To our knowledge this is the lowest reported specific on-resistance for a 600V FET.

引用

页码：1219 / 1222

页数：4