Calculations of the reflectance of porous silicon and other antireflection coating to silicon solar cells

被引：6

作者：

Aroutiounian, VM ^{[1
]}

Maroutyan, KR ^{[1
]}

Zatikyan, AL ^{[1
]}

Lévy-Clément, C ^{[1
]}

Touryan, KJ ^{[1
]}

机构：

[1] Yerevan State Univ, Yerevan 375049, Armenia

来源：

SOLAR AND SWITCHING MATERIALS | 2001年 / 4458卷

关键词：

porous silicon; reflectance;

D O I：

10.1117/12.448266

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A method was developed for the theoretical calculation of the reflectance for the antireflection. coatings made of porous silicon. Although porous silicon has been the focus of interest for the past years, still a satisfactory concept for calculating the reflectance features is lacking. Towards this end, we suggest a new concept that is a combination of the optical matrix method and a graded-bandgap model of porous silicon, which takes into account the gradient in porosity. The calculations based on the optical matrix method were carried out for common antireflection coatings, as well, for MgF2, ZnS and Ta2O5 in order to prove feasibility of the method. A rather good agreement with experimental data was found for all types of antireflection coatings. It is shown that the model of porous silicon as a graded-band semiconductor is valid and is a handy method for the reflectance calculation for porous silicon.

引用

页码：61 / 68

页数：8

共 22 条

[1] Investigations of solar cells with porous silicon as antireflection layer [J].