Tn situ characterisation of III-V substrate oxide desorption by surface photoabsorption in MOVPE

被引：16

作者：

Allwood, DA ^{[1
]}

Mason, NJ ^{[1
]}

Walker, PJ ^{[1
]}

机构：

[1] Univ Oxford, Clarendon Lab, Oxford OX1 3PU, England

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1999年 / 66卷 / 1-3期

基金：

英国工程与自然科学研究理事会;

关键词：

oxide desorption; III-V substrate; surface photoabsorption;

D O I：

10.1016/S0921-5107(99)00129-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The thermal desorption of the oxides of several III-V substrate materials has been investigated by surface photoabsorption (SPA). GaAs, GaSb and InSb substrates were slowly heated to desorb surface oxides. SPA was performed by probing these surfaces with p-polarised 633 nm radiation and constantly monitoring the reflected beam intensity. Such an arrangement allows the oxide desorption to be observed clearly, non-invasively and continuously. The effect of oxidation conditions is explored and temperatures for the deoxidation of GaAs, Gasb and InSb substrates are estimated. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：83 / 87

页数：5

共 14 条

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