Anodes for Sodium Ion Batteries Based on Tin-Germanium-Antimony Alloys

被引:322
作者
Farbod, Behdokht [1 ,2 ]
Cui, Kai [2 ]
Kalisvaart, W. Peter [1 ,2 ]
Kupsta, Martin [2 ]
Zahiri, Benjamin [1 ,2 ]
Kohandehghan, Alireza [1 ,2 ]
Lotfabad, Elmira Memarzadeh [1 ,2 ]
Li, Zhi [1 ,2 ]
Luber, Erik J. [2 ,3 ]
Mitlin, David [1 ,2 ]
机构
[1] Univ Alberta, Dept Chem & Mat Engn, Edmonton, AB T6G 2V4, Canada
[2] NRC, Natl Inst Nanotechnol NINT, Edmonton, AB T6G 2M9, Canada
[3] Univ Alberta, Dept Chem, Edmonton, AB T6G 2G2, Canada
基金
加拿大自然科学与工程研究理事会;
关键词
sodium ion battery; NIB; NaB; SIB; lithium ion battery; LIB; anode; Sn; Sb; Ge; thin film; SOLID-ELECTROLYTE INTERPHASE; LI-ION; HIGH-CAPACITY; NEGATIVE ELECTRODES; ENERGY-STORAGE; THIN-FILMS; FLUOROETHYLENE CARBONATE; PARTICLE-SIZE; ANATASE TIO2; PERFORMANCE;
D O I
10.1021/nn4063598
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Here we provide the first report on several compositions of ternary Sn-Ge-Sb thin film alloys for application as sodium ion battery (aka NIB, NaB or SIB) anodes, employing Sn50Ge50, Sb50Ge50, and pure Sn, Ge, Sb as baselines. Sn33Ge33Sb33, Sn50Ge25Sb25, Sn60Ge20Sb20, and Sn50Ge50 all demonstrate promising electrochemical behavior, with Sn50Ge25Sb25 being the best overall. This alloy has an initial reversible specific capacity of 833 mAhg(-1) (at 85 mAg(-1)) and 662 mAhg(-1) after 50 charge discharge cycles. Sn50Ge25Sb25 also shows excellent rate capability, displaying a stable capacity of 381 mAhg(-1) at a current density of 8500 mAg(-1) (similar to 10C). A survey of published literature indicates that 833 mAhg(-1) is among the highest reversible capacities reported for a Sn-based NIB anode, while 381 mAhg(-1) represents the optimum fast charge value. HRTEM shows that Sn50Ge25Sb25 Is a composite of 10-15 nm Sn and Sn-alloyed Ge nanocrystallites that are densely dispersed within an amorphous matrix. Comparing the microstructures of alloys where the capacity significantly exceeds the rule of mixtures prediction to those where it does not leads us to hypothesize that this new phenomenon originates from the Ge(Sn) that is able to sodiate beyond the 1:1 Na:Ge ratio reported for the pure element. Combined TOF-SIMS, EELS TEM, and FIB analysis demonstrates substantial Na segregation within the film near the current collector interface that is present as early as the second discharge, followed by cycling-induced delamination from the current collector.
引用
收藏
页码:4415 / 4429
页数:15
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