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Simulation of advanced-LOCOS capability for sub-0.25 micron CMOS isolation
被引：3
作者：
Jones, SK
Bazley, DJ
Beanland, R
Badenes, G
Scaife, B
机构：
来源：
SISPAD '97 - 1997 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES
|
1997年
关键词：
D O I：
10.1109/SISPAD.1997.621368
中图分类号：
TM [电工技术];
TN [电子技术、通信技术];
学科分类号：
0808 ;
0809 ;
摘要：
The visco-elastic oxidation model has been calibrated on 0.35 and 0.25 mu m CMOS LOGOS-type isolation structures. Simulation is used to assess the capability of advanced LOGOS options for sub-0.25 micron CMOS. At reduced active area pitch the active-area lifting phenomenon restricts the thickness of field oxide which may be grown. Predictions of the maximum field oxide and active ar ea encroachment are made for an active area pitch of 0.6 mu m.
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页码：185 / 188
页数：4
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