Spin-polarized tunneling in a half-metallic ferromagnet

被引：166

作者：

Tanaka, CT ^{[1
]}

Nowak, J ^{[1
]}

Moodera, JS ^{[1
]}

机构：

[1] MIT, Francis Bitter Natl Magnet Lab, Cambridge, MA 02139 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1999年 / 86卷 / 11期

关键词：

D O I：

10.1063/1.371678

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Direct measurement of the conduction electron spin polarization (P) in epitaxial NiMnSb was performed to test the prediction of half metallicity in this material. Spin-polarized tunneling in NiMnSb/Al2O3/Al junctions showed P of 28%, contrary to the predicted value of 100%. Magnetoresistance measurements in NiMnSb/Al2O3/Ni80Fe20 junctions concurred with this result. The discrepancy between theory and experiment is discussed. Also, the latter junctions show four nonvolatile remanent states due to the NiMnSb magnetocrystalline anisotropy, which has potential as four-level logic elements. (C) 1999 American Institute of Physics. [S0021-8979(99)02623-7].

引用

页码：6239 / 6242

页数：4

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