Electronic structure of HgTe nanocrystals: An observation of p-d weakening

被引:8
作者
Rath, S. [1 ]
Sahu, S. N. [1 ]
机构
[1] Inst Phys, Cluster & Nanostruct Lab, Bhubaneswar 751005, Orissa, India
关键词
electronic structure; nanocrystals; semiconductor; quantum confinement effect;
D O I
10.1016/j.susc.2006.02.037
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Photoemission studies to identify the electronic structure of the HgTe nanocrystals revealed a new phenomenon of p-d weakening, as a consequence of size quantization effect associated with the mean crystalline size, 5.35 +/- 0.83 nm. The weakening of the p-d hybridization by a factor of 0.33, to that of the bulk HgTe suggests the valence band maxima and core level shifts toward higher binding energy. The widening of the band gap due to size quantization is confirmed from optical absorption and photoluminescence measurements. The upward and downward shift of the conduction band minima and the valence band maxima with respect to the bulk value of HgTe are found to be 1.6 eV and 0.54 eV respectively. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:L110 / L115
页数:6
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