Precise chemical analysis development for silicon wafers after rapid thermal processing

被引：3

作者：

Briantseva, TA

Lebedeva, ZM

Lioubtchenko, DV

Markov, IA

Nolan, M

Perova, TS

Moore, RA

机构：

[1] Russian Acad Sci, Inst Radioengn & Elect, Moscow 103907, Russia

[2] Univ Dublin Trinity Coll, Dept Elect & Elect Engn, Dublin 2, Ireland

来源：

APPLIED SURFACE SCIENCE | 2000年 / 156卷 / 1-4期

关键词：

silicon; rapid thermal processing; photometry;

D O I：

10.1016/S0169-4332(99)00509-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The precise chemical analysis (PCA) was developed to study the layers near the semiconductor surface. This method is based on dissolving of different components in the selective etchants. The solution, containing the products of etching, was analysed with photometric technique. In this paper, we present the photometric measurements of "free" (non-interconnected) Si atoms, which remain at the silicon surface after a typical process of semiconductor technology such as rapid thermal diffusion (RTD) of boron into silicon. The advantage of this method is that it is non-destructive for the silicon matrix. The boron content was also investigated in the volume near the surface. The accuracy is evaluated as 5%. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：21 / 25

页数：5

共 8 条

[1] Process-induced modification to the surface of crystalline GaAs measured by photometry [J].