Temperature dependence of Raman band of SnO2 crystal

被引：3

作者：

Asari, T ^{[1
]}

Sato, T ^{[1
]}

机构：

[1] HIROSAKI UNIV, FAC SCI, DEPT PHYS, HIROSAKI, AOMORI 036, JAPAN

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1997年 / 66卷 / 05期

关键词：

first-order Raman band; frequency shift and band width; thermal expansion; phonon self-energy;

D O I：

10.1143/JPSJ.66.1360

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We measured the first-order Raman band of Al, mode of SnO2 crystal in the temperature range from 300 to 973 K. The results of the frequency shift and the band width were found to be agree well with the calculated results taking the thermal expansion into account. It is confirmed that the frequency shift and the band width can he explained unifiably by the phonon self-energy considering the thermal expansion.

引用

页码：1360 / 1363

页数：4

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