Properties of Ba-ferrite/AlN double layered films for perpendicular magnetic recording media

被引：49

作者：

Morisako, A

Naka, T

Ito, K

Takizawa, U

Matsumoto, M

Hong, YK

机构：

[1] Shinshu Univ, Fac Engn, Dept Informat Engn, Nagano 3808553, Japan

[2] Univ Idaho, Dept Mat & Met Engn, Moscow, ID 83844 USA

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2002年 / 242卷

基金：

日本学术振兴会;

关键词：

Ba-ferrite; perpendicular magnetic recording; magnetic recording; thin films; coercivity;

D O I：

10.1016/S0304-8853(01)01230-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper, research works on Ba-ferrite (BaM) thin films achieved during the last two decades have been introduced. Magnetic properties of BaM/AlN films were studied. Grain size of BaM layer with an AlN underlayer was suppressed to 50-80 nm. A non-magnetic layer was formed between BaM and AlN layers due to the diffusion of Al. The H-Cperpendicular to for BaM/AlN films with c-axis orientation was 4.9 kOe at T-S of about 600degreesC. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：304 / 310

页数：7

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