Temperature and optical characteristics of tin oxide membrane gate ISFET

被引：13

作者：

Liao, HK ^{[1
]}

Yang, ES

Chou, JC

Chung, WY

Sun, TP

Hsiung, SK

机构：

[1] Chung Yuan Christian Univ, Dept Elect Engn, Chungli 32023, Taiwan

[2] Natl Yunlin Univ Sci & Technol, Inst Elect & Informat Engn, Tunlin 640, Taiwan

[3] ChungYu Jr Coll Business & Adm, Dept Management Informat Syst, Keelung 201, Taiwan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1999年 / 46卷 / 12期

关键词：

light shield; optical; pH sensitive; temperature; tin oxide;

D O I：

10.1109/16.808051

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The influence of temperature and optical effects on ISFET performance are important. In this study, the temperature characteristics of the SnO2/Si3N4/SiO2/Si ISFET are investigated by the zero temperature coefficient (T.C.) adjustment and the dual FET's configuration, respectively. The result show that a zero T.C. of the SnO2 gate ISFET can be achieved when the appropriate operation current was set. Subsequently, the T.C. of tin oxide membrane/electrolyte interfacecan be evaluated by the dual FET's configuration, On the other hand, due to the SnO2 gate ISFET is sensitive to the light exposure, thus in order to improve this drawback, a multi-structure ISFET's: SnO2/Al/SiO2/Si3N4/Si ISFET's have been developed, in this structure, aluminum is used as a light shield, and the tin oxide is used as a pH sensitive layer. The results show the ISFET's with aluminum as a light shield have low light sensitivity compared with ISFET's without aluminum as a light shield.

引用

页码：2278 / 2281

页数：4

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