CuIn1-xGaxSe2-based photovoltaic cells from electrodeposited precursor

被引：9

作者：

Bhattacharya, RN

Granata, JE

Batchelor, W

Hasoon, F

Wiesner, H

Ramanathan, K

Keane, J

Noufi, RN

Sites, JR

机构：

来源：

OPTICAL MATERIALS TECHNOLOGY FOR ENERGY EFFICIENCY AND SOLAR ENERGY CONVERSION XV | 1997年 / 3138卷

关键词：

electrodeposition; copper-indium-gallium-selenide; physical vapor deposition; photovoltaic device;

D O I：

10.1117/12.279196

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

We have fabricated 13.7%-efficient CuIn1-XGaXSe2 (CIGS)-based devices from electrodeposited precursors. As deposited electrodeposited precursors are Cu-rich films. Additional In, Ga, and Se were added to the electrodeposited precursor film by physical evaporation to adjust the final composition to CuIn1-xGaxSe2. Three devices with Ga/(In+Ga) ratio of 0.16, 0.26, and 0.39 were fabricated from electrodeposited precursors. The films/devices have been characterized by inductive-coupled plasma spectrometry, Auger electron spectroscopy, X-ray diffraction, electron-probe microanalysis, current-voltage characteristics, capacitance-voltage, and spectral response. The electrodeposited device parameters are compared with those of a 17.7% physical vapor deposited device.

引用

页码：90 / 95

页数：6