Phase detection of electrostatic force by AFM with a conductive tip

被引:30
作者
Takahashi, T [1 ]
Kawamukai, T [1 ]
机构
[1] Univ Tokyo, RCAST, Meguro Ku, Tokyo 1538904, Japan
关键词
electrostatic force; Kelvin probe force microscopy; surface potential; Fermi level; work function;
D O I
10.1016/S0304-3991(99)00124-2
中图分类号
TH742 [显微镜];
学科分类号
摘要
Electrostatic force measurements were performed by the Kelvin probe force microscopy, which consists of the atomic force microscopy and a conductive tip. Sample surface potential was evaluated through the electrostatic force, which works between the sample and the tip when we apply an AC bias at a frequency f(s) with a DC offset. If the DC offset voltage is equal to the surface potential difference between the sample and the tip, the amplitude of the f(s) component in the electrostatic force becomes zero, and the phase of the f(s) component jumps 180 degrees there. We found that the complementary use of the amplitude and phase signals improved the accuracy of the determination of the surface potential. We measured both the work functions of some metals and the surface Fermi levels of an InAs layers on (1 0 0) and (1 1 0) GaAs substrates based on the phase detection method of the electrostatic force. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:63 / 68
页数:6
相关论文
共 17 条
[1]   Kelvin probe force microscopy for potential distribution measurement of cleaved surface of GaAs devices [J].
Arakawa, M ;
Kishimoto, S ;
Mizutani, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (3B) :1826-1829
[2]  
BINNIG G, 1986, PHYS REV LETT, V56, P55
[3]   NANOMETER-SCALE IMAGING OF POTENTIAL PROFILES IN OPTICALLY-EXCITED N-I-P-I HETEROSTRUCTURE USING KELVIN PROBE FORCE MICROSCOPY [J].
CHAVEZPIRSON, A ;
VATEL, O ;
TANIMOTO, M ;
ANDO, H ;
IWAMURA, H ;
KANBE, H .
APPLIED PHYSICS LETTERS, 1995, 67 (21) :3069-3071
[4]  
*ED COMM, 1984, HDB PHYS
[5]   Surface evolution in GaAs(110) homoepitaxy; from microscopic to macroscopic morphology [J].
Holmes, DM ;
Tok, ES ;
Sudijono, JL ;
Jones, TS ;
Joyce, BA .
JOURNAL OF CRYSTAL GROWTH, 1998, 192 (1-2) :33-46
[6]   SILICON PN JUNCTION IMAGING AND CHARACTERIZATIONS USING SENSITIVITY ENHANCED KELVIN PROBE FORCE MICROSCOPY [J].
KIKUKAWA, A ;
HOSAKA, S ;
IMURA, R .
APPLIED PHYSICS LETTERS, 1995, 66 (25) :3510-3512
[7]   ATOMIC ORDERING OF GAINP STUDIED BY KELVIN PROBE FORCE MICROSCOPY [J].
LENG, Y ;
WILLIAMS, CC ;
SU, LC ;
STRINGFELLOW, GB .
APPLIED PHYSICS LETTERS, 1995, 66 (10) :1264-1266
[8]   MOLECULAR-BEAM EPITAXY GROWTH OF QUANTUM DOTS FROM STRAINED COHERENT UNIFORM ISLANDS OF INGAAS ON GAAS [J].
LEONARD, D ;
KRISHNAMURTHY, M ;
FAFARD, S ;
MERZ, JL ;
PETROFF, PM .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (02) :1063-1066
[9]   NATURE OF STRAINED INAS 3-DIMENSIONAL ISLAND FORMATION AND DISTRIBUTION ON GAAS(100) [J].
MADHUKAR, A ;
XIE, Q ;
CHEN, P ;
KONKAR, A .
APPLIED PHYSICS LETTERS, 1994, 64 (20) :2727-2729
[10]   SELF-ORGANIZED GROWTH OF REGULAR NANOMETER-SCALE INAS DOTS ON GAAS [J].
MOISON, JM ;
HOUZAY, F ;
BARTHE, F ;
LEPRINCE, L ;
ANDRE, E ;
VATEL, O .
APPLIED PHYSICS LETTERS, 1994, 64 (02) :196-198