Continuity and morphology of TaN barriers deposited by Atomic Layer Deposition and comparison with physical vapor deposition

被引：13

作者：

Besling, WFA

Ignacimouttou, ML

Humbert, A

Mellier, M

Torres, J

机构：

[1] Philips Semicond Crolles R&D, F-38920 Crolles, France

[2] STMicorelect, F-38926 Crolles, France

[3] Philips Res, NL-5656 AA Eindhoven, Netherlands

来源：

MICROELECTRONIC ENGINEERING | 2004年 / 76卷 / 1-4期

关键词：

atomic layer deposition; ionized physical vapour deposition; HF dip pin hole decoration; barrier continuity; step coverage;

D O I：

10.1016/j.mee.2004.07.015

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Continuity and Morphology of TaN barriers deposited by Atomic Layer Deposition and Comparison with Physical Vapor Deposition: After barrier deposition the samples were exposed to a HF solution at various concentrations and various exposure times and analyzed by cross-sectional Scanning Electron Microscopy analysis in order to reveal any discontinuities in the barrier films. A comparison has been made between SIP and SIP EnCoRe ionised Physical Vapour Deposition (PVD) and two ALD approaches: ALD only and ALD-etch-ALD. The ALD barrier does not show evidence of pinholes after being subjected to the etching test. The results from this etching test indicate that a 20 cycle ALD TaN barrier deposited on oxide is continuous and free from pinholes. The SIP EnCoRe barrier outperforms the SIP barrier with respect to Barrier continuity. The step coverage and conformality of the ALD and PVD films were measured with Transmission Electron Microscopy on the same high aspect ratio structures. The study was extended by a top view SEM CD analysis to measure the overhang of barrier and seed film as function of Cu seed bias and underlying barrier. It is shown that a larger process window for the Cu seed deposition exists if the barrier thickness is reduced. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：60 / 69

页数：10

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